advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -30v so-8 compatible r ds(on) 3.1m simple drive requirement i d -135a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.5 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without notice 201211221 1 AP6681GMT-HF rating halogen-free product -30 + 20 -33 parameter drain-source voltage gate-source voltage continuous drain current 3 , v gs @ 10v continuous drain current (chip), v gs @ 10v -135 -55 to 150 continuous drain current 3 , v gs @ 10v -26.4 pulsed drain current 1 -200 storage temperature range 5 -55 to 150 total power dissipation 83.3 thermal data parameter total power dissipation operating junction temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the pmpak ? 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink. s s s g pmpak ? 5 x 6 d d d d g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-20a - 2.7 3.1 m v gs =-4.5v, i d =-20a - 3.9 4.6 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 -1.45 -3 v g fs forward transconductance v ds =-10v, i d =-20a - 66 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-20a - 94 150 nc q gs gate-source charge v ds =-15v - 25 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 38 - nc t d(on) turn-on delay time v ds =-15v - 20 - ns t r rise time i d =-1a - 14 - ns t d(off) turn-off delay time r g =3.3 ? - 210 - ns t f fall time v gs =-10v - 84 - ns c iss input capacitance v gs =0v - 13800 22080 pf c oss output capacitance v ds =-15v - 1060 - pf c rss reverse transfer capacitance f=1.0mhz - 800 - pf r g gate resistance f=1.0mhz - 2.7 5.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-10a, v gs =0 v , - 45 - ns q rr reverse recovery charge di/dt=100a/s - 50 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 60 o c/w at steady state. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6681GMT-HF
a p6681gmt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+09 fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g = -4.0v t c =25 o c 0 40 80 120 160 200 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 2 3 4 5 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -20a v g = -10v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d = -250ua
ap6681gmt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance 2.01e+09 fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0 2 4 6 8 0 40 80 120 160 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -20 a v ds = -15v 0 4000 8000 12000 16000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 40 80 120 160 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) 0 20 40 60 80 100 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j =-40 o c
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